2SA1937 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1937
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: PW-MOLD
2SA1937 Transistor Equivalent Substitute - Cross-Reference Search
2SA1937 Datasheet (PDF)
2sa1937.pdf
2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm High voltage: VCEO = -600 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1 Base current IB
2sa1931.pdf
2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit: mm Low saturation voltage: VCE (sat) = -0.4 V (max) High-speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitt
2sa1930.pdf
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -180 VCollector-emitter voltage VCEO -180 VEmitter-base v
2sa1939.pdf
2SA1939 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196ABSOLUTE MAXIMUM RATING (Ta=25cc)ccCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collec
2sa1939.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbo
2sa1930i.pdf
2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d
2sa1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)
2sa1930 3ca1930.pdf
2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171(3DA5171) Features: High f , complementary pair with 2SC5171(3DA5171). T/Absolute maximum ratings(Ta=25) Sym
2sa1930s 3ca1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)
2sa1930i 3ca1930i.pdf
2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features: High f , complementary pair with 2SC5171I(3DA5171I). T/Absolute maximum ratings(Ta=25)
2sa1931.pdf
isc Silicon PNP Power Transistor 2SA1931DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sa1932.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1932DESCRIPTIONHigh collector breakdown voltageComplementary to 2SC5174100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sa1939.pdf
isc Silicon PNP Power Transistor 2SA1939DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC5196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .