2N5784SM Datasheet. Specs and Replacement
Type Designator: 2N5784SM 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO252
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2N5784SM Substitution
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2N5784SM datasheet
2N5784SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒
2N5784SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he... See More ⇒
2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) SILICON EPITAXIAL 8.51 (0.335) NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. General purpose power transistor for 8.51 (0.335) dia. switching and linear applications in a hermetic TO 39 package. 5.08 (0.200) typ. 2.54 2 (0.100)... See More ⇒
Detailed specifications: 2N5774, 2N5775, 2N5776, 2N578, 2N5781, 2N5782, 2N5783, 2N5784, D965, 2N5785, 2N5785SM, 2N5786, 2N579, 2N5793, 2N5794, 2N5795, 2N5796
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