2SC5075 Specs and Replacement

Type Designator: 2SC5075

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.3 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TPS

 2SC5075 Substitution

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2SC5075 datasheet

 ..1. Size:219K  toshiba

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2SC5075

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2SC5075

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 8.3. Size:106K  sanyo

2sc5070.pdf pdf_icon

2SC5075

Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2... See More ⇒

Detailed specifications: 2SA2219, 2SA2220, 2SA940A, 2SC2073A, 2SC3709A, 2SC3710A, 2SC4935, 2SC5000, 2SC2383, 2SC5076, 2SC5122, 2SC5154, 2SC5171, 2SC5172, 2SC5173, 2SC5174, 2SC5176

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