2SC5075 Specs and Replacement
Type Designator: 2SC5075
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TPS
2SC5075 Substitution
- BJT ⓘ Cross-Reference Search
2SC5075 datasheet
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf ![]()
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Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2... See More ⇒
Detailed specifications: 2SA2219, 2SA2220, 2SA940A, 2SC2073A, 2SC3709A, 2SC3710A, 2SC4935, 2SC5000, 2SC2383, 2SC5076, 2SC5122, 2SC5154, 2SC5171, 2SC5172, 2SC5173, 2SC5174, 2SC5176
Keywords - 2SC5075 pdf specs
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