2SC5122 Specs and Replacement

Type Designator: 2SC5122

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: LSTM

 2SC5122 Substitution

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2SC5122 datasheet

 ..1. Size:171K  toshiba

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2SC5122

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2sc510 2sc512.pdf pdf_icon

2SC5122

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2SC5122

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 8.3. Size:59K  panasonic

2sc5128.pdf pdf_icon

2SC5122

Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one screw ... See More ⇒

Detailed specifications: 2SA940A, 2SC2073A, 2SC3709A, 2SC3710A, 2SC4935, 2SC5000, 2SC5075, 2SC5076, TIP142, 2SC5154, 2SC5171, 2SC5172, 2SC5173, 2SC5174, 2SC5176, 2SC5196, 2SC5197

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