2SC5266A Datasheet and Replacement
Type Designator: 2SC5266A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.8
W
Maximum Collector-Base Voltage |Vcb|: 600
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TPL
-
BJT ⓘ Cross-Reference Search
2SC5266A Datasheet (PDF)
8.6. Size:463K sanyo
2sc5264.pdf 
Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :
8.7. Size:42K sanyo
2sc5264ls.pdf
Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe
8.8. Size:112K sanyo
2sc5265.pdf
Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55
8.9. Size:31K sanyo
2sc5265ls.pdf
Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector
8.10. Size:209K inchange semiconductor
2sc5265.pdf
isc Silicon NPN Power Transistor 2SC5265DESCRIPTIONHigh Breakdown Voltage-(Vcb=1200V) High ReliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter-controlledLightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-E
Datasheet: 2SC5176
, 2SC5196
, 2SC5197
, 2SC5198
, 2SC5199
, 2SC5201
, 2SC5208
, 2SC5242
, BD777
, 2SC5279
, 2SC5307
, 2SC5351
, 2SC5352
, 2SC5353
, 2SC5354
, 2SC5355
, 2SC5356
.
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