2SC5266A Todos los transistores

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2SC5266A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5266A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.8 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TPL

Búsqueda de reemplazo de transistor bipolar 2SC5266A

2SC5266A Datasheet (PDF)

1.1. 2sc5266a.pdf Size:181K _toshiba

2SC5266A
2SC5266A

3.1. 2sc5266.pdf Size:164K _toshiba

2SC5266A
2SC5266A

4.1. 2sc5260.pdf Size:220K _toshiba

2SC5266A
2SC5266A

4.2. 2sc5263.pdf Size:103K _toshiba

2SC5266A
2SC5266A

4.3. 2sc5261.pdf Size:182K _toshiba

2SC5266A
2SC5266A

4.4. 2sc5261ft.pdf Size:103K _toshiba

2SC5266A
2SC5266A

4.5. 2sc5262.pdf Size:126K _toshiba

2SC5266A
2SC5266A

4.6. 2sc5265ls.pdf Size:31K _sanyo

2SC5266A
2SC5266A

Ordering number : ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions High breakdown voltage(VCBO=1200V). unit : mm High reliability(Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Base 2 : Collector 3 : Emitt

4.7. 2sc5265.pdf Size:112K _sanyo

2SC5266A
2SC5266A

Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANY

4.8. 2sc5264.pdf Size:463K _sanyo

2SC5266A
2SC5266A

Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079C Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220

4.9. 2sc5264ls.pdf Size:42K _sanyo

2SC5266A
2SC5266A

Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5264] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 Specifica

Otros transistores... 2SC5176 , 2SC5196 , 2SC5197 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 , 2N2222 , 2SC5279 , 2SC5307 , 2SC5351 , 2SC5352 , 2SC5353 , 2SC5354 , 2SC5355 , 2SC5356 .

 


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Introduzca al menos 2 números o letras