2SC5266A Todos los transistores

Ordering number ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079C Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO

Ordering number ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5264] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 Spe

Ordering number EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55

Ordering number ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions High breakdown voltage(VCBO=1200V). unit mm High reliability(Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector

isc Silicon NPN Power Transistor 2SC5265 DESCRIPTION High Breakdown Voltage-(Vcb=1200V) High Reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter-controlled Lighting ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-E