2SC5906 Specs and Replacement
Type Designator: 2SC5906
SMD Transistor Code: WP
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TSM
2SC5906 Substitution
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2SC5906 datasheet
2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage VCE (sat) = 0.2 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristi... See More ⇒
Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage (VCBO 1 700 V) High-speed switching (tf ... See More ⇒
Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V High-speed switching tf ... See More ⇒
Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V High-speed switching tf ... See More ⇒
Detailed specifications: 2SC5738 , 2SC5755 , 2SC5784 , 2SC5785 , 2SC5810 , 2SC5819 , 2SC5886 , 2SC5886A , BC327 , 2SC5930 , 2SC5948 , 2SC5949 , 2SC5976 , 2SC6000 , 2SC6010 , 2SC6033 , 2SC6034 .
Keywords - 2SC5906 pdf specs
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