All Transistors. TPC6603 Datasheet

 

TPC6603 Datasheet and Replacement


   Type Designator: TPC6603
   SMD Transistor Code: H3E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 28 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: VS6
 

 TPC6603 Substitution

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TPC6603 Datasheet (PDF)

 ..1. Size:156K  toshiba
 tpc6603.pdf pdf_icon

TPC6603

TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications Unit: mmDC/DC Converter Applications Strobe Flash Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol R

 8.1. Size:158K  toshiba
 tpc6604.pdf pdf_icon

TPC6603

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE (sat) = -0.23 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

 8.2. Size:150K  toshiba
 tpc6602.pdf pdf_icon

TPC6603

TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri

 8.3. Size:151K  toshiba
 tpc6601.pdf pdf_icon

TPC6603

TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni

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History: KC846AW | PHPT61002PYCLH | AUY22-2 | NA32MX | KSE45H-8 | BF440 | 2SB1434

Keywords - TPC6603 transistor datasheet

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