2N1176 Specs and Replacement

Type Designator: 2N1176

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.3 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

 2N1176 Substitution

- BJT ⓘ Cross-Reference Search

 

2N1176 datasheet

 9.1. Size:392K  rca

 2n1177.pdf pdf_icon

2N1176

... See More ⇒

 9.2. Size:232K  rca

 2n1179.pdf pdf_icon

2N1176

... See More ⇒

 9.3. Size:212K  rca

 2n1178.pdf pdf_icon

2N1176

... See More ⇒

 9.4. Size:206K  rca

 2n1170.pdf pdf_icon

2N1176

... See More ⇒

SHOW MORE

Detailed specifications: 2N1170, 2N1171, 2N1172, 2N1173, 2N1174, 2N1175, 2N1175A, 2N1175B, 2SA1943, 2N1176A, 2N1176B, 2N1177, 2N1178, 2N1179, 2N118, 2N1180, 2N1182

Keywords - 2N1176 pdf specs

 2N1176 cross reference

 2N1176 equivalent finder

 2N1176 pdf lookup

 2N1176 substitution

 2N1176 replacement