TTC5200 Datasheet and Replacement
Type Designator: TTC5200
SMD Transistor Code: TTC5200
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 230 V
Maximum Collector-Emitter Voltage |Vce|: 230 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 145 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3PL
TTC5200 Substitution
TTC5200 Datasheet (PDF)
ttc5200.pdf

TTC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to TTA1943 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCo
ttc5200.pdf

TTC5200Minos Silicon NPN Triple Diffused TypePower Amplifier Applications Complementary toTTA1943 High collector voltage:VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause t
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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History: 2N2665 | BC556AP



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