MT3S03AU Specs and Replacement
Type Designator: MT3S03AU
SMD Transistor Code: MR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 10000 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: USM
MT3S03AU Substitution
- BJT ⓘ Cross-Reference Search
MT3S03AU datasheet
MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain Gain = 8dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2 ... See More ⇒
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Detailed specifications: 2SC5092, 2SC5095, 2SC5096, 2SC5106, 2SC5107, 2SC5108, 2SC5317FT, 2SC5319, A1941, MT3S04AU, MT3S07FS, MT3S07T, MT3S07U, MT3S11FS, MT3S15TU, MT3S16U, MT3S19
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