MT3S03AU Datasheet, Equivalent, Cross Reference Search
Type Designator: MT3S03AU
SMD Transistor Code: MR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 10000 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: USM
MT3S03AU Transistor Equivalent Substitute - Cross-Reference Search
MT3S03AU Datasheet (PDF)
mt3s03au.pdf
MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Gain = 8dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 10 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 2
mt3s07t.pdf
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mt3s07fs.pdf
MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mmVHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications Superior performance in buffer applications 1 Superior noise characteristics 3: NF = 1.6 dB, |S |2 = 8 dB (f = 2 GHz) 21e 20.80.050.10.051.00.050.10.05Absolute Maximum Ratings (Ta = 25C)
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N328A
