All Transistors. MT3S07FS Datasheet

 

MT3S07FS Datasheet, Equivalent, Cross Reference Search


   Type Designator: MT3S07FS
   SMD Transistor Code: 4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.085 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 12000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: FSM

 MT3S07FS Transistor Equivalent Substitute - Cross-Reference Search

   

MT3S07FS Datasheet (PDF)

 ..1. Size:148K  toshiba
mt3s07fs.pdf

MT3S07FS
MT3S07FS

MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mmVHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications Superior performance in buffer applications 1 Superior noise characteristics 3: NF = 1.6 dB, |S |2 = 8 dB (f = 2 GHz) 21e 20.80.050.10.051.00.050.10.05Absolute Maximum Ratings (Ta = 25C)

 8.1. Size:223K  toshiba
mt3s07u.pdf

MT3S07FS
MT3S07FS

MT3S07U PCB24

 8.2. Size:226K  toshiba
mt3s07t.pdf

MT3S07FS
MT3S07FS

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 9.1. Size:111K  toshiba
mt3s03au.pdf

MT3S07FS
MT3S07FS

MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Gain = 8dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 10 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 2

 9.2. Size:132K  toshiba
mt3s04au.pdf

MT3S07FS
MT3S07FS

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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