MT3S07T Datasheet, Equivalent, Cross Reference Search
Type Designator: MT3S07T
SMD Transistor Code: AD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 12000 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TESM
MT3S07T Transistor Equivalent Substitute - Cross-Reference Search
MT3S07T Datasheet (PDF)
mt3s07t.pdf
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mt3s07fs.pdf
MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mmVHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications Superior performance in buffer applications 1 Superior noise characteristics 3: NF = 1.6 dB, |S |2 = 8 dB (f = 2 GHz) 21e 20.80.050.10.051.00.050.10.05Absolute Maximum Ratings (Ta = 25C)
mt3s03au.pdf
MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Gain = 8dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 10 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 2
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
