MT3S20R Datasheet, Equivalent, Cross Reference Search
Type Designator: MT3S20R
SMD Transistor Code: MU
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.32 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7500 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: S-MINI
MT3S20R Transistor Equivalent Substitute - Cross-Reference Search
MT3S20R Datasheet (PDF)
mt3s20r.pdf
MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.080.42+0.08-0.050.170.05M A -0.07FEATURES 3 Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 120.95 0.952.90.2A Marking 3 1. Base2. Emitter3. Collec
mt3s20p.pdf
MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz) High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characteristi
mt3s20tu.pdf
MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 3 2 Marking 3 1.BASE M U 2.EMITTER 3.COLLECTOR UFM 1 2 JEDEC -JEITA -TOSHIBA 2-2U1BAbsolu
mt3s21p.pdf
MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mmFEATURES Low-Noise Figure: NF=1.55 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist
mt3s22p.pdf
MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.5dB(Typ.) (@f=1GHz) High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
