MT4S03A Datasheet, Equivalent, Cross Reference Search
Type Designator: MT4S03A
SMD Transistor Code: MR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 10000 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SMQ
MT4S03A Transistor Equivalent Substitute - Cross-Reference Search
MT4S03A Datasheet (PDF)
mt4s03a.pdf
MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Gain = 9dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 10 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 2 V
mt4s03bu.pdf
MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.6dB (Typ.) (@f = 2GHz) High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) Collector-base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
