2N5819 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5819
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 135 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
2N5819 Transistor Equivalent Substitute - Cross-Reference Search
2N5819 Datasheet (PDF)
..1. Size:83K central
2n5814 2n5815 2n5816 2n5817 2n5818 2n5819.pdf
2n5814 2n5815 2n5816 2n5817 2n5818 2n5819.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
Datasheet: 2N5811 , 2N5812 , 2N5813 , 2N5814 , 2N5815 , 2N5816 , 2N5817 , 2N5818 , MJE350 , 2N582 , 2N5820 , 2N5821 , 2N5822 , 2N5823 , 2N5824 , 2N5825 , 2N5826 .