2N5819 Datasheet. Specs and Replacement
Type Designator: 2N5819 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 135 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
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2N5819 datasheet
2n5814 2n5815 2n5816 2n5817 2n5818 2n5819.pdf ![]()
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
Detailed specifications: 2N5811, 2N5812, 2N5813, 2N5814, 2N5815, 2N5816, 2N5817, 2N5818, B647, 2N582, 2N5820, 2N5821, 2N5822, 2N5823, 2N5824, 2N5825, 2N5826
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BJT Parameters and How They Relate
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