All Transistors. 2N582 Datasheet

 

2N582 Datasheet and Replacement


   Type Designator: 2N582
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 8 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5
 

 2N582 Substitution

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2N582 Datasheet (PDF)

 ..1. Size:218K  rca
 2n582.pdf pdf_icon

2N582

 0.1. Size:47K  central
 2n5820 2n5821 2n5822 2n5823.pdf pdf_icon

2N582

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD

 0.2. Size:138K  microelectronics
 2n5820-23.pdf pdf_icon

2N582

Datasheet: 2N5812 , 2N5813 , 2N5814 , 2N5815 , 2N5816 , 2N5817 , 2N5818 , 2N5819 , 2N2907 , 2N5820 , 2N5821 , 2N5822 , 2N5823 , 2N5824 , 2N5825 , 2N5826 , 2N5827 .

History: LDTC144WET1G | 2SB1133Q | 2SC4428 | BD435-25 | A1015A-O | C64 | MMBT2369L

Keywords - 2N582 transistor datasheet

 2N582 cross reference
 2N582 equivalent finder
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