2N582 Datasheet and Replacement
Type Designator: 2N582
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N582 Substitution
2N582 Datasheet (PDF)
2n5820 2n5821 2n5822 2n5823.pdf

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD
Datasheet: 2N5812 , 2N5813 , 2N5814 , 2N5815 , 2N5816 , 2N5817 , 2N5818 , 2N5819 , 2N2907 , 2N5820 , 2N5821 , 2N5822 , 2N5823 , 2N5824 , 2N5825 , 2N5826 , 2N5827 .
History: TN4036 | GET889 | DMC20101 | BD149-6 | ECG298 | 2SB1017 | 2SC4475
Keywords - 2N582 transistor datasheet
2N582 cross reference
2N582 equivalent finder
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2N582 substitution
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History: TN4036 | GET889 | DMC20101 | BD149-6 | ECG298 | 2SB1017 | 2SC4475



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