2N5820 Datasheet and Replacement
Type Designator: 2N5820
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
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2N5820 Datasheet (PDF)
2n5820 2n5821 2n5822 2n5823.pdf

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD
Datasheet: 2N5813 , 2N5814 , 2N5815 , 2N5816 , 2N5817 , 2N5818 , 2N5819 , 2N582 , 2222A , 2N5821 , 2N5822 , 2N5823 , 2N5824 , 2N5825 , 2N5826 , 2N5827 , 2N5827A .
History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | HA44 | 2N2872 | T11
Keywords - 2N5820 transistor datasheet
2N5820 cross reference
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History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | HA44 | 2N2872 | T11



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