2N5820 Datasheet. Specs and Replacement
Type Designator: 2N5820 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
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2N5820 Substitution
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2N5820 datasheet
2n5820 2n5821 2n5822 2n5823.pdf ![]()
TM 2N5820 2N5822 NPN Central 2N5821 2N5823 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5820 series types are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. MARKING COD... See More ⇒
Detailed specifications: 2N5813, 2N5814, 2N5815, 2N5816, 2N5817, 2N5818, 2N5819, 2N582, D667, 2N5821, 2N5822, 2N5823, 2N5824, 2N5825, 2N5826, 2N5827, 2N5827A
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BJT Parameters and How They Relate
History: 2N3582 | 2N3782 | 2N3707 | MMUN2134 | 2N371-33 | 2N3747 | 2SA1204
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