All Transistors. HIT647 Datasheet

 

HIT647 Datasheet and Replacement


   Type Designator: HIT647
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO92MOD
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HIT647 Datasheet (PDF)

 0.1. Size:71K  renesas
 r07ds0449ej hit647-1.pdf pdf_icon

HIT647

Preliminary Datasheet R07DS0449EJ0400HIT647 (Previous: REJ03G1504-0300)Rev.4.00Silicon PNP Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: SS8050G | HBU406 | 2SC3264 | 2SC3647 | CSB772R | 2SC1583 | 2SA906

Keywords - HIT647 transistor datasheet

 HIT647 cross reference
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