All Transistors. HIT647 Datasheet

 

HIT647 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HIT647
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO92MOD

 HIT647 Transistor Equivalent Substitute - Cross-Reference Search

   

HIT647 Datasheet (PDF)

 0.1. Size:71K  renesas
 r07ds0449ej hit647-1.pdf

HIT647 HIT647

Preliminary Datasheet R07DS0449EJ0400HIT647 (Previous: REJ03G1504-0300)Rev.4.00Silicon PNP Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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