All Transistors. HIT647 Datasheet

 

HIT647 Datasheet and Replacement


   Type Designator: HIT647
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO92MOD
 

 HIT647 Substitution

   - BJT ⓘ Cross-Reference Search

   

HIT647 Datasheet (PDF)

 0.1. Size:71K  renesas
 r07ds0449ej hit647-1.pdf pdf_icon

HIT647

Preliminary Datasheet R07DS0449EJ0400HIT647 (Previous: REJ03G1504-0300)Rev.4.00Silicon PNP Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

Datasheet: 2SC1213AKD , 2SC2618C , 2SD2655 , 2SC4702 , 2SB1691 , HIT468 , HIT667 , HIT562 , 2N5551 , 15C01C , 2SA1179N , 2SA1768 , 2SA2040 , 2SA2127 , 2SA2186 , 2SA2205 , 2SA2210 .

History: LBC556B | 2N5323BR

Keywords - HIT647 transistor datasheet

 HIT647 cross reference
 HIT647 equivalent finder
 HIT647 lookup
 HIT647 substitution
 HIT647 replacement

 

 
Back to Top

 


 
.