All Transistors. 2N5825 Datasheet

 

2N5825 Datasheet and Replacement


   Type Designator: 2N5825
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
 

 2N5825 Substitution

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2N5825 Datasheet (PDF)

 9.1. Size:218K  rca
 2n582.pdf pdf_icon

2N5825

 9.2. Size:47K  central
 2n5820 2n5821 2n5822 2n5823.pdf pdf_icon

2N5825

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD

 9.3. Size:138K  microelectronics
 2n5820-23.pdf pdf_icon

2N5825

Datasheet: 2N5818 , 2N5819 , 2N582 , 2N5820 , 2N5821 , 2N5822 , 2N5823 , 2N5824 , BD139 , 2N5826 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , 2N5830 .

History: 2SB612A | BCW49C | HE2955 | 2SB1134R | NKT405 | 2SB553O | BD792

Keywords - 2N5825 transistor datasheet

 2N5825 cross reference
 2N5825 equivalent finder
 2N5825 lookup
 2N5825 substitution
 2N5825 replacement

 

 
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