2N5826 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5826
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
2N5826 Transistor Equivalent Substitute - Cross-Reference Search
2N5826 Datasheet (PDF)
9.2. Size:47K central
2n5820 2n5821 2n5822 2n5823.pdf
2n5820 2n5821 2n5822 2n5823.pdf
TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD
Datasheet: 2N5819 , 2N582 , 2N5820 , 2N5821 , 2N5822 , 2N5823 , 2N5824 , 2N5825 , C945 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , 2N5830 , 2N5831 .
