2N5826 Datasheet. Specs and Replacement

Type Designator: 2N5826  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

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2N5826 datasheet

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TM 2N5820 2N5822 NPN Central 2N5821 2N5823 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5820 series types are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. MARKING COD... See More ⇒

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Detailed specifications: 2N5819, 2N582, 2N5820, 2N5821, 2N5822, 2N5823, 2N5824, 2N5825, TIP41C, 2N5827, 2N5827A, 2N5828, 2N5828A, 2N5829, 2N583, 2N5830, 2N5831

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