All Transistors. 2N5827 Datasheet

 

2N5827 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5827
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -

 2N5827 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5827 Datasheet (PDF)

 9.1. Size:218K  rca
 2n582.pdf

2N5827

 9.2. Size:47K  central
 2n5820 2n5821 2n5822 2n5823.pdf

2N5827 2N5827

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD

 9.3. Size:138K  microelectronics
 2n5820-23.pdf

2N5827 2N5827

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3112 | 2N3711 | NTE48 | 2N2929 | 2SD188 | MJE2021 | 2SC2749A

 

 
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