2SAR513P Datasheet and Replacement

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MCDriver Packaging specifications Inner circuit (Unit : mm)Package T

2SAR513P5DatasheetMiddle Power Transistors(-50V / -1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-1AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging spe

2SAR513P2SAR513PFRADatasheetPNP -1.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-50VBase IC Collector -1.0AEmitter 2SAR513P 2SAR513PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR513PFRA2) Complementary NPN Types : 2SCR513P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -500mA/ -25mA)4) Lead F

2SAR513RDatasheetPNP -1.0A -50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-50VIC-1ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR513R3)Low VCE(sat)VCE(sat)=-400mV(Max.)(IC/IB=-500A/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, HIGH