2SAR542P Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SAR542P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: MPT3
2SAR542P Transistor Equivalent Substitute - Cross-Reference Search
2SAR542P Datasheet (PDF)
2sar542p.pdf
2SAR542PData SheetPNP -5.0A -30V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-30VBase Collector IC-5.0AEmitter 2SAR542P lFeatures(SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -2A/ -100mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplications
2sar542pfra.pdf
2SAR542P FRADatasheetMiddle Power Transistor (-30V / -5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-5AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat) =-400mV (Max.)(IC/IB=-2A/-100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGl
2sar542f3.pdf
2SAR542F3DatasheetPNP -3.0A -30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO-30VIC-3A2SAR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=-0.20V(Max.).(IC/IB=-1A/-50mA)3) High collector current.IC=-3A(max),
2sar542d.pdf
Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
