2N5832 Specs and Replacement
Type Designator: 2N5832
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 175
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2N5832 datasheet
..1. Size:67K mcc
2n5832.pdf 

MCC Micro Commercial Components 21201 Itasca Street Chatsworth 2N5832 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Through Hole Package Plastic-case Bipolar NPN Transistor Pin Configuration Bottom View C B E Electrical Characteristics @ 25 C Unless Otherwise Specified TO-92 Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitt... See More ⇒
..2. Size:77K secos
2n5832.pdf 

2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G H J Millimeter REF. A D Min. Max. A 4.40 4.70 B 4.30 4.70 B C 12.70 - Collector D 3.30 3.81 K E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - ... See More ⇒
9.2. Size:294K fairchild semi
2n5830.pdf 

Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V V Collector-... See More ⇒
9.4. Size:11K semelab
2n5838.pdf 

2N5838 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 275V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
9.5. Size:108K jmnic
2n5838 2n5839 2n5840.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute max... See More ⇒
9.7. Size:117K inchange semiconductor
2n5838 2n5839 2n5840.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collecto... See More ⇒
Detailed specifications: 2N5827, 2N5827A, 2N5828, 2N5828A, 2N5829, 2N583, 2N5830, 2N5831, BC548, 2N5833, 2N5834, 2N5835, 2N5836, 2N5837, 2N5838, 2N5839, 2N583A
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