2N5832 Datasheet and Replacement
Type Designator: 2N5832
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 175
Noise Figure, dB: -
Package: TO92
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2N5832 Datasheet (PDF)
2n5832.pdf

MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt
2n5832.pdf

2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G HJMillimeterREF. A D Min. Max.A 4.40 4.70B 4.30 4.70BC 12.70 -CollectorD 3.30 3.81KE 0.36 0.56F 0.36 0.51G 1.27 TYP.H 1.10 -
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf

Datasheet: 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , 2N5830 , 2N5831 , 2N3904 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 , 2N5839 , 2N583A .
History: 2SA1331O6 | 2N2986 | 2SA1080 | 2N5142 | 2N3024 | 2G110 | 2N1107
Keywords - 2N5832 transistor datasheet
2N5832 cross reference
2N5832 equivalent finder
2N5832 lookup
2N5832 substitution
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History: 2SA1331O6 | 2N2986 | 2SA1080 | 2N5142 | 2N3024 | 2G110 | 2N1107



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