2SB1710 Specs and Replacement
Type Designator: 2SB1710
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Package: TSMT3
2SB1710 Substitution
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2SB1710 datasheet
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) E... See More ⇒
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XY PNP epitaxial planar silicon tra... See More ⇒
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XW PNP epitaxial planar silicon transistor... See More ⇒
Detailed specifications: 2SB1695 , 2SB1697 , 2SB1698 , 2SB1705 , 2SB1706 , 2SB1707 , 2SB1708 , 2SB1709 , TIP42 , 2SB1730 , 2SB1731 , 2SB1732 , 2SB1733 , 2SB852K , 2SC2411K , 2SC2412K , 2SC2413K .
History: 2N2986
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