2SB1710
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1710
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 320
MHz
Collector Capacitance (Cc): 7
pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package:
TSMT3
2SB1710
Transistor Equivalent Substitute - Cross-Reference Search
2SB1710
Datasheet (PDF)
..1. Size:104K rohm
2sb1710.pdf 
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( )1 20.95 0.95VCE(sat) -350mV 0.161.9(1) Base at Ic = -500mA / IB = -25mA (2) E
8.1. Size:118K rohm
2sb1714.pdf
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XYPNP epitaxial planar silicon tra
8.2. Size:98K rohm
2sb1713.pdf
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XWPNP epitaxial planar silicon transistor
Datasheet: 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
