2SC3838K Datasheet and Replacement

2SC3838KDatasheetHigh-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-346 Parameter Value SC-59 VCEO11VIC50mASMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ. fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NF.lApplicationlUHF FR

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

2SC5662 / 2SC4726 / 2SC4083 /Transistors 2SC3838K / 2SC4043SHigh-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)2SC5662 / 2SC4726 / 2SC4083 /2SC3838K / 2SC4043S External dimensions (Units : mm) Features1) High transition frequency. (Typ. fT= 1.5GHz)2SC56621.20.2 0.8 0.22) Small rbbCc and high gain. (Typ. 4ps)(2)3) Small NF. (3)(1)(1) Base0.15Max.(2) E

UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 12*High transition frequency. *Small rbbCc and high gain. SOT-23*Small NF. 312SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel2SC3

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3838MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 11 VdcC

2SC3838COLLECTORHigh-Frequency Amplifier Transistor33NPN Silicon 11P b Lead(Pb)-Free2BASE2SOT-23EMITTERMAXIMUM RATINGS (Ta=25C)Rating Symbol ValueUnitVCollector-Emitter Voltage CEO 11 VCollector-Base Voltage VCBO20 VEmitter-Base Voltage VEBO3.0 VICmACollector Current-Continuous 50THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitT

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO

SMD Type TransistorsNPN Transistors2SC3838SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 High transition frequency. Small rbbCc and high gain. Small NF.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 11V amplifier and switch. Collector Current : 50mA Lead(Pb)-FreePackages & Pin Assignments GST2SC3838F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3838DESCRIPTIONLow NoiseNF = 3.5 dB TYP. @V = 6 V, I = 2 mA, f = 500 MHzCE CHigh Current-Gain Bandwidth Productf = 3.2 GHz TYP. @V = 10 V, I = 10 mA, f = 500 MHzT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-n