2SC4618 Datasheet and Replacement

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SC4618DatasheetDatasheetHigh-Frequency Amplifer Transistor (25V, 50mA, 300MHz)lOutlinel SOT-416 Parameter Value SC-75A VCEO25VIC50mAEMT3lFeatures lInner circuitl l1)Low collector capacitance. (Cob:Typ.1.3pF)lApplicationlHIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTERRF AMPLIFIER, LOCAL OSCILLATORlPackaging specifi

2SC4618 0.05A , 40V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Voltage and Current. High DC Current Gain. A Complementary to 2SC4738. M33Top View C BApplication 11 2 General Purpose Amplification. L 2KEDCLASSIFICATION OF hFE H

2SC4618NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:Power dissipation PCMSOT-523(SC-75)Collector current ICM: 0.05 ACollector-base voltage V(BR)CBO: 40 VOperating and storage junction temperature range TJ, Tstg CELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) TYP MAX UNITParameter Symbol MINCollector-base breakdown voltage IC =50 A,

SMD Type TransistorsNPN Transistors2SC4618SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 High Voltage and Current High DC Current Gain3 Small Package0.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 4

2SC4618H / 2SC4618 / 2SC4098 / 2SC2413 / 2SC2058STransistorsHigh-frequency Amplifier Transistor(25V, 50mA, 300MHz)2SC4618H / 2SC4618 / 2SC4098 / 2SC2413K /2SC2058S Features1) Low collector capacitance. (Cob : Typ. 1.3pF) External dimensions (Units : mm)2) Low rbb, high gain, and excellent noise characteristics.2SC4618H1.60.85(1)(2)(3) Absolute maximum ratings (Ta=2

AEC-Q101 QualifiedHigh-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413KFeatures Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2SC4617/DPreliminary Information 2SC4617NPN Silicon General PurposeAmplifier TransistorNPN GENERALThis NPN transistor is designed for general purpose amplifier applications.PURPOSE AMPLIFIERThis device is housed in the SOT-416/SC90 package which is designed forTRANSISTORSlow power surface mount applications, wh

Ordering number:EN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064[2SA1770/2SC4614]E : EmitterC : CollectorB : Base( ) : 2SA1770SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CP

Ordering number:EN3398A2SA1772 : PNP Epitaxial Planar Silicon Transistor2SC4615 : NPN Triple Diffused Planar Silicon Transistor2SA1772/2SC4615High-Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=1A).unit:mm High breakdown votlage (VCEO 400V).2045B[2SA1772/2SC4615]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPuni

Ordering number:ENN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064A[2SA1770/2SC4614]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector( ) : 2SA17703 : Base2.54 2.54Specificat

Ordering number:EN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064Features [2SA1768/2SC4612] Adoption of MBIT process. High breakdown voltage, large current capacity. Fast switching speed.E : EmitterC : CollectorB : Base

General purpose small signal amplifier (50V, 0.15A) 2SC4617EB Features Dimensions (Unit : mm) 1) Excellent hFE linearity. EMT3F2) Complements the 2SA1774EB. 1.6 0.7Structure 0.26NPN silicon epitaxial (3)planar transistor (1) (2)0.130.5 0.51.0Each lead has same dimensions(1) Base(2) Emitter (3) Collector Abbreviated symbol : B = Denotes hFE

AEC-Q101 QualifiedGeneral purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHAFeatures Dimensions (Unit : mm)1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)2SC2412K 2SC40812SC2412KFRA 2SC4081FRA2. Complements the 2SA1037AK / 2SA1576A /2SA1037AKFRA / 2SA1576AFRA2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

MCC2SC4617-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SC4617-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4617-SFax: (818) 701-4939Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

MCC2SC4617-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SC4617-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4617-SFax: (818) 701-4939Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

MCC2SC4617-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SC4617-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4617-SFax: (818) 701-4939Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

2SC4617G, S2SC4617GNPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Reduces

2SC4617G, S2SC4617GNPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Reduces

2SC4617NPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS Pb-Free Package is Available*SUR

ON Semiconductort2SC4617NPN Silicon General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierNPN GENERALapplications. This device is housed in the SOT-416/SC90 packagePURPOSE AMPLIFIERwhich is designed for low power surface mount applications, whereTRANSISTORSboard space is at a premium.SURFACE MOUNT Reduces Board Space H

Ordering number : EN3578A2SA1770/2SC4614Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of MBIT process High breakdown voltage and large current capacity( )2SA1770SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO (--)180 VC

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ.) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 B E C Tape Reel

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 E B C Tape Reel

2SC460, 2SC461Silicon NPN Epitaxial PlanarApplication 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC460, 2SC461Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC460 2SC461 UnitCollector to base voltage VCBO 30 30 VCollector to emitter voltage VCEO 30 30 VEmitter to base voltage VE

2SC4617 0.15A , 60V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES Low Cob. Cob=2.0pF Complement of 2SA1774 AM33Top View C BCLASSIFICATION OF hFE 11 2L 2KProduct-Rank 2SC4617-Q 2SC4617-R 2SC4617-S ERange 120~270 180~390 270~560 DH JF GM

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-5232SC4617 TRANSISTOR (NPN)FEATURES Low Cob:Cob=2.0pF(Typ)1. BASE Complement to 2SA17742. EMTTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Vol

2SC4617SOT-523 Transistor(NPN)SOT-5231. BASE 2. EMITTER 3. COLLECTOR Features Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Con

2SC4617NPN3312SC-89(SOT-523F)WEITRONhttp://www.weitron.com.tw2SC4617ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current Gain--hFE 120560(IC=1 mAdc, VCE=6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- 0.5 (IC=50 mAdc, IB=5mAdc)Output Capacitance

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC4617QT1GORDERING INFORMATION SeriesDevice Marking ShippingL2SC4617QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4617QT1G We declare that the material of product compliance with RoHS requirements.Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC4617QT1GORDERING INFORMATION SeriesDevice Marking ShippingL2SC4617QT1GB

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC4615TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLarge current calcity (IC=1A)High blocking voltage(VCEO 400V)0.127+0.1 max0.80-0.1+0.12.3 0

SMD Type TransistorsNPN Transistors2SC4617SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V3 Low Cob:Cob=2.0pF(Typ)0.30.05 Complement to 2SA1774+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25

SMD Type TransistorsSilicon NPN Triple Diffused Type Transistor2SC4616TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLarge current calcity (IC=2A)High blocking voltage(VCEO 400V)0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

Bruckewell Technology Corp., Ltd. General Purpose Transistors NPN Silicon 2SC4617XT1G We declare that the material of product compliance with RoHS requirements MECHANICAL DATA * Case: SOT-523 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-523 Absolute maximum ratings (Ta=25C) Device marking Bruckewell Technology Corp., Ltd. Electrical characteristics (T

CHENMKO ENTERPRISE CO.,LTD2SC4617GPSURFACE MOUNT General Purpose NPN Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Power Amplifier .FEATURESC-75/SOT-416* Surface mount package. (SC-75/SOT-416)* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (Collector power dissipation).(2)(3)1.5~1.7CONSTRUCTION0.5

2SC4617 NPN general purpose TransistorFEATURES Pb Reduces board space. Lead-free High hFE,210-460(typical). Low VCE(sat),

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25C unless otherwise noted 2 Symbol Parameter Value UnitsPC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto

2SC46172SC46172SC46172SC4617TRANSISTOR(NPN)2SC4617SOT523FEATURES Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150

2SC4617 2SC4617 SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Low Cob = 2.0pF (Typical) Low Vce(sat)

SOT-523 Plastic-Encapsulate TransistorsSOT-523 2SC4617 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuo