2SC4726 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4726
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 11 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3200 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: EMT3 SC-75A
2SC4726 Transistor Equivalent Substitute - Cross-Reference Search
2SC4726 Datasheet (PDF)
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and
2sc4728.pdf
Ordering number:EN3872PNP/NPN Epitaxial Planar Silicon Transistors2SA1824/2SC472850V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1824/2SC4728]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce
2sc4727.pdf
Ordering number:EN3871NPN Epitaxial Planar Silicon Transistor2SC472720V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2084B Fast switching speed.[2SC4727] Large current capacity.4.51.9 2.610.5 It is possible to make appliances more compact1.2 1.4because its height on board is 9.5mm.
2sc4729.pdf
Ordering number:EN3877PNP/NPN Epitaxial Planar Silicon Transistors2SA1825/2SC472950V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1825/2SC4729]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
