2SCR293P Specs and Replacement
Type Designator: 2SCR293P
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 270
2SCR293P Substitution
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2SCR293P datasheet
Midium Power Transistors (30V / 1A) 2SCR293P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor MPT3 (SC-63) Features Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) (1) Base Applications (2) Collector Abbreviated symbol NV (3) Emitter Driver Packaging specifications Inner circuit (U... See More ⇒
2SCR293P 2SCR293PFRA Datasheet NPN 1.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base Collector IC 1.0A Emitter 2SCR293PFRA 2SAR293P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR293P 2SAR293PFRA 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS... See More ⇒
2SCR293P5 Datasheet Middle Power Transistors (30V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 1A MPT3 lFeatures lInner circuit l l 1) Suitable for Middle Power Driver. 2) Complementary PNP Types 2SAR293P5. 3) Low VCE(sat) VCE(sat)=350mV(Max.). (IC/IB=500mA/25mA) lApplication l LOW FREQUENCY AMPLIFIER,... See More ⇒
Detailed specifications: 2SC5659 , 2SC5661 , 2SC5662 , 2SC5663 , 2SC5824 , 2SC5825 , 2SC5866 , 2SC5876 , MJE350 , 2SCR372P , 2SCR512P , 2SCR513P , 2SCR514P , 2SCR514R , 2SCR522EB , 2SCR522M , 2SCR522UB .
History: PUMH20 | 2SC4774 | 2SCR372P | PUMH15 | PUMH14
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