All Transistors. 2SCR293P Datasheet

 

2SCR293P Datasheet and Replacement


   Type Designator: 2SCR293P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: MPT3 SC-63 SOT-428
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2SCR293P Datasheet (PDF)

 ..1. Size:478K  rohm
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2SCR293P

Midium Power Transistors (30V / 1A) 2SCR293P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorMPT3(SC-63) FeaturesLow saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)(1) Base Applications(2) CollectorAbbreviated symbol : NV(3) EmitterDriver Packaging specifications Inner circuit (U

 0.1. Size:1312K  rohm
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2SCR293P

2SCR293P2SCR293PFRADatasheetNPN 1.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase Collector IC1.0AEmitter 2SCR293PFRA2SAR293P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR293P2SAR293PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS

 0.2. Size:1440K  rohm
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2SCR293P

2SCR293P5DatasheetMiddle Power Transistors (30V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC1AMPT3lFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary PNP Types : 2SAR293P5.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=500mA/25mA)lApplicationlLOW FREQUENCY AMPLIFIER,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC859W | AUY19-3 | KT8255A | AC138 | 2SD471 | 2SC4370AP | JA100

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