2N5838 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5838
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 275 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3

2N5838 Transistor Equivalent Substitute - Cross-Reference Search

2N5838 Datasheet (PDF)

..1. Size:11K semelab
2n5838.pdf

2N5838Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 275V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

..2. Size:108K jmnic
2n5838 2n5839 2n5840.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max

..3. Size:117K inchange semiconductor
2n5838 2n5839 2n5840.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto

9.1. Size:298K rca
2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf

9.2. Size:294K fairchild semi
2n5830.pdf

Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-

9.3. Size:67K mcc
2n5832.pdf

MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt

9.4. Size:379K no
2n5839.pdf

9.5. Size:77K secos
2n5832.pdf

2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G HJMillimeterREF. A D Min. Max.A 4.40 4.70B 4.30 4.70BC 12.70 -CollectorD 3.30 3.81KE 0.36 0.56F 0.36 0.51G 1.27 TYP.H 1.10 -

9.6. Size:50K microelectronics
2n5830 2n5831.pdf