2SD2657 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SD2657
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: TSMT3

2SD2657 Transistor Equivalent Substitute - Cross-Reference Search

2SD2657 Datasheet (PDF)

..1. Size:67K rohm
2sd2657.pdf

2SD2657 Transistors Low frequency amplifier 2SD2657 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. 1 22) VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 1A / IB = 50mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Packaging

0.1. Size:75K rohm
2sd2657k-1.pdf

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.81) A collector current is large. 2) VCE(sat) 350mV 0.3Min.At IC = 1A / IB = 50mA Each lead has same dimensionsROHM : SMT3 Abbreviated symbol : FZ (1) EmitterEIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector

0.2. Size:943K rohm
2sd2657kfra.pdf