2SD2670 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2670
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 360 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: TSMT3
2SD2670 Transistor Equivalent Substitute - Cross-Reference Search
2SD2670 Datasheet (PDF)
2sd2670.pdf
2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7( )3 Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) : max.250mV 0.95 0.950.16 At lc=1.5A / lB=30mA 1.9(1) Base(2) EmitterEach lead has same dimensions (3) Collector Abso
2sd2671.pdf
2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) : max. 370mV (1) (2)0.95 0.95 At lc=1.5A / lB=75mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute maxi
2sd2678.pdf
2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XXNPN epitaxial planar silicon transistor
2sd2675.pdf
2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit : mm) Application Low frequency amplifier TSMT31.0MAX2.90.85 Features 0.70.4(3)1) A collector current is large. 2) Collector saturation voltage is low. 1 2VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 500mA / IB = 25mA 1.9(1) Base(2) EmitterEach lead
2sd2672.pdf
2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( )1 20.95 0.95At IC = 2A / IB = 40mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Pac
2sd2673.pdf
2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7(3) Features 1) A collector current is large. (3A) ( ) ( )2) VCE(sat) : max. 250mV 1 20.95 0.950.16At IC = 1.5A / IB = 30mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector P
2sd2674.pdf
2SD2674DatasheetGeneral purpose amplification (12V, 1.5A)lOutlinel SOT-346T Parameter Value SC-96 VCEO12VIC1.5ATSMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector saturation voltage is low. VCE(sat)200mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificat
2sd2679.pdf
2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XZNPN epitaxial planar silicon transistor
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
