DTA044EEB Datasheet, Equivalent, Cross Reference Search
Type Designator: DTA044EEB
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 40
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-89
EMT3F
SOT416FL
DTA044EEB Transistor Equivalent Substitute - Cross-Reference Search
DTA044EEB Datasheet (PDF)
dta044e.pdf
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DTA044T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO-50VIC-60mA R147kDTA044TM DTA044TEB(SC-105AA) (SC-89) UMT3F lFeaturesl1) Built-In Biasing Resistor2) Built-in bias resistors enable
dta044teb.pdf
-100mA/-50V Digital transistors(with built-in resistors)DTA044TM / DTA044TEB / DTA044TUBFeatures Dimensions (Unit : mm)1) Built-in input resistor enables the direct control of base terminal VMT3by input voltage without external resistor.(See Inner circuit)2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .