DTA113ZE Datasheet and Replacement

TransistorsDigital transistors (built-in resistors)DTA113ZE / DTA113ZUA / DTA113ZKA /DTA113ZSAFFeatures FExternal dimensions (Units: mm)1) The built-in bias resistor allows theconfiguration of an inverter circuitwithout connecting any external in-put resistors (see Equivalent cir-cuit).2) Each bias resistor is a thin-film re-sistor. Since they are completely in-sulated,

SMD Type TransistorsDigital TransistorsDTA113ZE (KDTA113ZE )SOT-523 U nit: m m+0.11.6 -0.1 Features +0.11.0 -0.1+0.050.2 -0.05 0.150.05 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)2 1 The bias resistors consist of thin-film resistors with complete isolation

DTA113Z seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT3 UMT3VCC-50VIC(MAX.)-100mA R11kDTA113ZE DTA113ZUAR2 SOT-416(SC-75A) SOT-323(SC-70)10k SMT3 lFeaturesl1) Built-In Biasing Resistors2) Built-in bias

DDTA (R1R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1R2 Moisture Sensitivity: L

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTA113ZET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

CHENMKO ENTERPRISE CO.,LTDCHDTA113ZEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c