DTB523YE Datasheet. Specs and Replacement

Type Designator: DTB523YE  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: EMT3

  📄📄 Copy 

 DTB523YE Substitution

- BJT ⓘ Cross-Reference Search

 

DTB523YE datasheet

 ..1. Size:157K  rohm

 dtb523ye.pdf pdf_icon

DTB523YE

-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB523YE / DTB523YM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB523YE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 an inverter circuit without connecting external 0... See More ⇒

Detailed specifications: DTA144EM, DTA144EUB, DTA144WE, DTB113ZK, DTB123YK, DTB123YU, DTB513ZE, DTB513ZM, 2SB817, DTB523YM, DTB543EE, DTB543EM, DTB543XE, DTB543XM, DTB543ZE, DTB543ZM, DTB713ZE

Keywords - DTB523YE pdf specs

 DTB523YE cross reference

 DTB523YE equivalent finder

 DTB523YE pdf lookup

 DTB523YE substitution

 DTB523YE replacement