All Transistors. DTB523YE Datasheet

 

DTB523YE Datasheet and Replacement


   Type Designator: DTB523YE
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: EMT3
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DTB523YE Datasheet (PDF)

 ..1. Size:157K  rohm
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DTB523YE

-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB523YE / DTB523YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB523YE1.6 0.70.550.3Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( )2 1an inverter circuit without connecting external 0

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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