DTB523YM Datasheet. Specs and Replacement
Type Designator: DTB523YM 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
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DTB523YM datasheet
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB523YE / DTB523YM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB523YE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 an inverter circuit without connecting external 0... See More ⇒
Detailed specifications: DTA144EUB, DTA144WE, DTB113ZK, DTB123YK, DTB123YU, DTB513ZE, DTB513ZM, DTB523YE, S9013, DTB543EE, DTB543EM, DTB543XE, DTB543XM, DTB543ZE, DTB543ZM, DTB713ZE, DTB713ZM
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