DTB523YM Datasheet and Replacement
Type Designator: DTB523YM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA VMT3 SOT723
DTB523YM Substitution
DTB523YM Datasheet (PDF)
dtb523ye.pdf

-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB523YE / DTB523YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB523YE1.6 0.70.550.3Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( )2 1an inverter circuit without connecting external 0
Datasheet: DTA144EUB , DTA144WE , DTB113ZK , DTB123YK , DTB123YU , DTB513ZE , DTB513ZM , DTB523YE , 2SB817 , DTB543EE , DTB543EM , DTB543XE , DTB543XM , DTB543ZE , DTB543ZM , DTB713ZE , DTB713ZM .
History: L9012RLT3G
Keywords - DTB523YM transistor datasheet
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DTB523YM equivalent finder
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History: L9012RLT3G



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