DTB743EM Datasheet, Equivalent, Cross Reference Search
Type Designator: DTB743EM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 20
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 115
Noise Figure, dB: -
Package: SC-105AA
VMT3
SOT723
DTB743EM Transistor Equivalent Substitute - Cross-Reference Search
DTB743EM Datasheet (PDF)
dtb743e dtb743ee.pdf
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743EE / DTB743EM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB743EE1.6 0.70.550.3 Feature ( )31. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit ( ) ( )2 1 without connecting external i
dtb743ze.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB743ZE1.6 0.70.550.3( )3Feature ( ) ( )2 11) VCE(sat) is lower than conventional products. 0.2 0.20.15(1) GND0.5 0.52) Built-in bias resistors enable the configuration of (2) IN1.0
dtb743xe.pdf
DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743XE / DTB743XM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB743XE1.6 0.70.3 0.55 Feature ( )31) VCE(sat) is lower than the conventional products. ( ) ( )2 10.2 0.22) Built-in bias resistors enable the configuration of an 0.15
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
