2N5855 Specs and Replacement
Type Designator: 2N5855
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO106
2N5855 Substitution
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2N5855 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5848, 2N5849, 2N585, 2N5850-2, 2N5851, 2N5852, 2N5853, 2N5854, 2SC4793, 2N5856, 2N5857, 2N5858, 2N5859, 2N586, 2N5860, 2N5861, 2N5862
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