All Transistors. DTC114EEB Datasheet

 

DTC114EEB Datasheet and Replacement


   Type Designator: DTC114EEB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC-89 EMT3F SOT416FL
 

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DTC114EEB Datasheet (PDF)

 ..1. Size:82K  rohm
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DTC114EEB

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f

 6.1. Size:56K  motorola
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DTC114EEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

 6.2. Size:55K  motorola
pdtc114eef 2.pdf pdf_icon

DTC114EEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

 6.3. Size:56K  philips
pdtc114ee 4.pdf pdf_icon

DTC114EEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: BC846AW-AU | LMUN5211T1G | BC846AT | BC846AWR | 2N155 | 2N1548A | 2N1417

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