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DTC114EEB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC114EEB
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 40 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC-89 EMT3F SOT416FL
 

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DTC114EEB Datasheet (PDF)

 ..1. Size:82K  rohm
dtc114eeb.pdf pdf_icon

DTC114EEB

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f

 6.1. Size:56K  motorola
pdtc114ee 4.pdf pdf_icon

DTC114EEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

 6.2. Size:55K  motorola
pdtc114eef 2.pdf pdf_icon

DTC114EEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

 6.3. Size:56K  philips
pdtc114ee 4.pdf pdf_icon

DTC114EEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

Otros transistores... DTC043EM , DTC043EUB , DTC043ZEB , DTC043ZM , DTC043ZUB , DTC044EEB , DTC044EM , DTC044EUB , C5198 , DTC114EM , DTC114EUB , DTC114WE , DTC114YEB , DTC114YM , DTC114YUA , DTC114YUB , DTC115EEB .

History: BC847BWT1 | 2SC5407

 

 
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