2N5859 Specs and Replacement
Type Designator: 2N5859
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO39
2N5859 Substitution
- BJT ⓘ Cross-Reference Search
2N5859 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5851, 2N5852, 2N5853, 2N5854, 2N5855, 2N5856, 2N5857, 2N5858, A940, 2N586, 2N5860, 2N5861, 2N5862, 2N5864, 2N5865, 2N5867, 2N5868
Keywords - 2N5859 pdf specs
2N5859 cross reference
2N5859 equivalent finder
2N5859 pdf lookup
2N5859 substitution
2N5859 replacement
History: 2SD362R | NSDU01 | 2SA115 | 2SD362O | 2N709-51 | 2N706B-46 | 2N706B
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2sa763 | a933 | 2sa818 replacement | irfb3607 datasheet | 2n2907 equivalent | c2026 | mpsa56 transistor equivalent | 13009 transistor


