DTD523YE Datasheet, Equivalent, Cross Reference Search
Type Designator: DTD523YE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 12
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: EMT3
DTD523YE Transistor Equivalent Substitute - Cross-Reference Search
DTD523YE Datasheet (PDF)
dtd523ye.pdf
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD523YE / DTD523YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD523YE1.6 0.70.55 0.3 Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( )2 10.2 0.2an inverter circuit without connecting external
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MPSU55
