All Transistors. DTD523YE Datasheet

 

DTD523YE Datasheet and Replacement


   Type Designator: DTD523YE
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: EMT3
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DTD523YE Datasheet (PDF)

 ..1. Size:178K  rohm
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DTD523YE

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD523YE / DTD523YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD523YE1.6 0.70.55 0.3 Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( )2 10.2 0.2an inverter circuit without connecting external

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMBT3906HE3 | 2N2874 | 2N332A | 2SB744A | BC847RA | BDW24 | 2SB1039

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