All Transistors. DTD723YE Datasheet

 

DTD723YE Datasheet and Replacement


   Type Designator: DTD723YE
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: EMT3
 
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DTD723YE Datasheet (PDF)

 ..1. Size:178K  rohm
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DTD723YE

200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD723YE / DTD723YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD723YE1.6 0.7 0.550.3( )3 Feature ( ) ( )2 10.2 0.21) VCE (sat) is lower than conventional products. 0.15(1) GND0.5 0.52) Built-in bias resistors enable the configuration of (2) IN1.0EMT3an i

Datasheet: DTD543EE , DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM , DTD713ZE , DTD713ZM , 2SD313 , DTD723YM , DTD743EE , DTD743EM , DTD743XE , DTD743XM , DTD743ZE , DTD743ZM , DTDG23YP .

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