DTD723YE PDF Specs and Replacement
Type Designator: DTD723YE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: EMT3
DTD723YE Substitution
DTD723YE PDF datasheet
dtd723ye.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD723YE / DTD723YM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD723YE 1.6 0.7 0.55 0.3 ( ) 3 Feature ( ) ( ) 2 1 0.2 0.2 1) VCE (sat) is lower than conventional products. 0.15 (1) GND 0.5 0.5 2) Built-in bias resistors enable the configuration of (2) IN 1.0 EMT3 an i... See More ⇒
Detailed specifications: DTD543EE , DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM , DTD713ZE , DTD713ZM , A1013 , DTD723YM , DTD743EE , DTD743EM , DTD743XE , DTD743XM , DTD743ZE , DTD743ZM , DTDG23YP .
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