DTD743ZM Datasheet, Equivalent, Cross Reference Search
Type Designator: DTD743ZM
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 20
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA
VMT3
SOT723
DTD743ZM Transistor Equivalent Substitute - Cross-Reference Search
DTD743ZM Datasheet (PDF)
dtd743ze.pdf
DTD743ZE / DTD743ZM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743ZE / DTD743ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD743ZE1.6 0.70.550.3 Feature ( )31) VCE(sat) is lower than conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1)
dtd743ee.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD723YE1.6 0.7 0.550.3( )3 Feature ( ) ( )2 10.2 0.21. VCE (sat) is lower than the conventional products. 0.15(1) GND0.5 0.52. Built-in bias resistors enable the configuration of (2) IN1.0EMT3
dtd743xe.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743XE / DTD743XM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD743XE1.6 0.70.550.3Feature ( )31) VCE(sat) is lower than the conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND0.5 0.5inverter cir
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
