KT814V9 Datasheet. Specs and Replacement
Type Designator: KT814V9 📄📄
SMD Transistor Code: КТ814В9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: KT-89
📄📄 Copy
KT814V9 Substitution
- BJT ⓘ Cross-Reference Search
KT814V9 datasheet
Detailed specifications: KT738A, KT739A, KT805IM, KT8126A1, KT8126B1, KT814A9, KT814B9, KT814G9, BC327, KT815A9, KT815B9, KT815G9, KT815V9, KT816A9, KT816B9, KT816G9, KT816V9
Keywords - KT814V9 pdf specs
KT814V9 cross reference
KT814V9 equivalent finder
KT814V9 pdf lookup
KT814V9 substitution
KT814V9 replacement
BJT Parameters and How They Relate
History: 2N355 | MJL4302AG | MMBTH11 | KT872G
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
a933 transistor datasheet | a1633 transistor | 2sa844 | 2sc1327 | 2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent

