KT816B9 Datasheet. Specs and Replacement

Type Designator: KT816B9  📄📄 

SMD Transistor Code: КТ816Б9

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: KT-89

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KT816B9 datasheet

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KT816B9

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Detailed specifications: KT814B9, KT814G9, KT814V9, KT815A9, KT815B9, KT815G9, KT815V9, KT816A9, BD335, KT816G9, KT816V9, KT8170A1, KT8170B1, KT817A9, KT817B9, KT817G9, KT817V9

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