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KT816V9 Specs and Replacement


   Type Designator: KT816V9
   SMD Transistor Code: КТ816В9
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: KT-89

 KT816V9 Transistor Equivalent Substitute - Cross-Reference Search

   

KT816V9 detailed specifications

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 kt816a-b-v-g.pdf pdf_icon

KT816V9

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Detailed specifications: KT814V9 , KT815A9 , KT815B9 , KT815G9 , KT815V9 , KT816A9 , KT816B9 , KT816G9 , B772 , KT8170A1 , KT8170B1 , KT817A9 , KT817B9 , KT817G9 , KT817V9 , KT8212A , KT8212B .

Keywords - KT816V9 transistor specs

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