KT816V9 Datasheet. Specs and Replacement

Type Designator: KT816V9  📄📄 

SMD Transistor Code: КТ816В9

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: KT-89

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KT816V9 datasheet

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KT816V9

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Detailed specifications: KT814V9, KT815A9, KT815B9, KT815G9, KT815V9, KT816A9, KT816B9, KT816G9, B772, KT8170A1, KT8170B1, KT817A9, KT817B9, KT817G9, KT817V9, KT8212A, KT8212B

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