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KT8170A1 Specs and Replacement


   Type Designator: KT8170A1
   SMD Transistor Code: КТ8170А1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: KT27

 KT8170A1 Transistor Equivalent Substitute - Cross-Reference Search

   

KT8170A1 detailed specifications

 9.1. Size:699K  russia
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KT8170A1

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Detailed specifications: KT815A9 , KT815B9 , KT815G9 , KT815V9 , KT816A9 , KT816B9 , KT816G9 , KT816V9 , 2SA1837 , KT8170B1 , KT817A9 , KT817B9 , KT817G9 , KT817V9 , KT8212A , KT8212B , KT8212V .

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