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KT817B9 Specs and Replacement


   Type Designator: KT817B9
   SMD Transistor Code: КТ817Б9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: KT-89

 KT817B9 Transistor Equivalent Substitute - Cross-Reference Search

   

KT817B9 detailed specifications

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 kt817a-b-v-g.pdf pdf_icon

KT817B9

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Detailed specifications: KT815V9 , KT816A9 , KT816B9 , KT816G9 , KT816V9 , KT8170A1 , KT8170B1 , KT817A9 , BD135 , KT817G9 , KT817V9 , KT8212A , KT8212B , KT8212V , KT8213A , KT8213B , KT8213V .

Keywords - KT817B9 transistor specs

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